Stephanie Essig
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Raising the one-sun conversion efficiency of III–V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions
S Essig, C Allebé, T Remo, JF Geisz, MA Steiner, K Horowitz, L Barraud, ...
Nature Energy 2 (9), 1-9, 2017
Stable dopant-free asymmetric heterocontact silicon solar cells with efficiencies above 20%
J Bullock, Y Wan, Z Xu, S Essig, M Hettick, H Wang, W Ji, M Boccard, ...
ACS energy letters 3 (3), 508-513, 2018
Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding
K Derendorf, S Essig, E Oliva, V Klinger, T Roesener, SP Philipps, ...
IEEE Journal of Photovoltaics 3 (4), 1423-1428, 2013
Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency
S Essig, MA Steiner, C Allebé, JF Geisz, B Paviet-Salomon, S Ward, ...
IEEE Journal of Photovoltaics 6 (4), 1012 - 1019, 2016
Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon
F Dimroth, T Roesener, S Essig, C Weuffen, A Wekkeli, E Oliva, G Siefer, ...
IEEE Journal of Photovoltaics 4 (2), 620-625, 2014
Wafer-bonded GaInP/GaAs//Si solar cells with 30% efficiency under concentrated sunlight
S Essig, J Benick, M Schachtner, A Wekkeli, M Hermle, F Dimroth
IEEE journal of Photovoltaics 5 (3), 977-981, 2015
Phonon-assisted electroluminescence from metallic carbon nanotubes and graphene
S Essig, CW Marquardt, A Vijayaraghavan, M Ganzhorn, S Dehm, ...
Nano letters 10 (5), 1589-1594, 2010
Progress towards a 30% efficient GaInP/Si tandem solar cell
S Essig, S Ward, MA Steiner, DJ Friedman, JF Geisz, P Stradins, ...
Energy Procedia 77, 464-469, 2015
Hole-collection mechanism in passivating metal-oxide contacts on Si solar cells: Insights from numerical simulations
RA Vijayan, S Essig, S De Wolf, BG Ramanathan, P Löper, C Ballif, ...
IEEE Journal of Photovoltaics 8 (2), 473-482, 2018
Overview about technology perspectives for high efficiency solar cells for space and terrestrial applications
AW Bett, SP Philipps, S Essig, S Heckelmann, R Kellenbenz, V Klinger, ...
28th European photovoltaic solar energy conference and exhibition, 1-6, 2013
Stability of perovskite materials and devices
W Fu, AG Ricciardulli, QA Akkerman, RA John, MM Tavakoli, S Essig, ...
Materials Today 58, 275-296, 2022
Fast atom beam activated wafer bonds between n-Si and n-GaAs with low resistance
S Essig, F Dimroth
ECS Journal of Solid State Science and Technology 2 (9), Q178, 2013
Toward annealing‐stable molybdenum‐oxide‐based hole‐selective contacts for silicon photovoltaics
S Essig, J Dréon, E Rucavado, M Mews, T Koida, M Boccard, J Werner, ...
Solar Rrl 2 (4), 1700227, 2018
Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity
S Essig, O Moutanabbir, A Wekkeli, H Nahme, E Oliva, AW Bett, F Dimroth
Journal of Applied Physics 113 (20), 2013
Passivated tunneling contacts to n-type wafer silicon and their implementation into high performance solar cells
P Stradins, S Essig, W Nemeth, BG Lee, D Young, A Norman, Y Liu, ...
National Renewable Energy Lab.(NREL), Golden, CO (United States), 2014
Interdigitated back passivated contact (IBPC) solar cells formed by ion implantation
DL Young, W Nemeth, V LaSalvia, R Reedy, S Essig, N Bateman, ...
IEEE Journal of Photovoltaics 6 (1), 41-47, 2015
III-V/Si wafer bonding using transparent, conductive oxide interlayers
AC Tamboli, MFAM van Hest, MA Steiner, S Essig, EE Perl, AG Norman, ...
Applied Physics Letters 106 (26), 2015
Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells
D Häussler, L Houben, S Essig, M Kurttepeli, F Dimroth, ...
Ultramicroscopy 134, 55-61, 2013
Dilute nitrides for 4-and 6-junction space solar cells
S Essig, E Stammler, S Ronsch, E Oliva, M Schachtner, G Siefer, AW Bett, ...
9th European Space Power Conference 690, 74, 2011
Challenges in the deposition of (Ag, Cu)(In, Ga) Se2 absorber layers for thin-film solar cells
S Essig, S Paetel, TM Friedlmeier, M Powalla
Journal of Physics: Materials 4 (2), 024003, 2021
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