| Chemical and morphological characteristics of ALD Al2O3 thin-film surfaces after immersion in pH buffer solutions JM Reyes, BMP Ramos, CZ Islas, WC Arriaga, PR Quintero, AT Jacome Journal of The Electrochemical Society 160 (10), B201, 2013 | 43 | 2013 |
| Electrical characterization of n-type a-SiGe: H/p-type crystalline-silicon heterojunctions P Rosales-Quintero, A Torres-Jacome, R Murphy-Arteaga, ... Semiconductor science and technology 19 (3), 366, 2003 | 21 | 2003 |
| FTIR and electrical characterization of a-Si: H layers deposited by PECVD at different boron ratios A Orduña-Diaz, CG Treviño-Palacios, M Rojas-Lopez, R Delgado-Macuil, ... Materials Science and Engineering: B 174 (1-3), 93-96, 2010 | 20 | 2010 |
| Fabrication, characterisation and modelling of integrated on-silicon inductors R Murphy-Arteaga, J Huerta-Chua, A Dı́az-Sánchez, A Torres-Jácome, ... Microelectronics Reliability 43 (2), 195-201, 2003 | 15 | 2003 |
| Self-organized and self-assembled TiO2 nanosheets and nanobowls on TiO2 nanocavities by electrochemical anodization and their properties A Arenas-Hernandez, C Zúñiga-Islas, A Torres-Jacome, ... Nano express 1 (1), 010054, 2020 | 14 | 2020 |
| On the prediction of the threshold voltage degradation in CMOS technology due to bias-temperature instability A Campos-Cruz, G Espinosa-Flores-Verdad, A Torres-Jacome, ... Electronics 7 (12), 427, 2018 | 14 | 2018 |
| Optical and compositional properties of amorphous silicon-germanium films by plasma processing for integrated photonics WW Hernández-Montero, IE Zaldívar-Huerta, C Zúñiga-Islas, ... Optical Materials Express 2 (4), 358-370, 2012 | 14 | 2012 |
| Very shallow boron junctions in Si by implantation and SOD diffusion obtained by RTP JP Castillo, AT Jacome, O Malik, NT Lopez Microelectronics Journal 39 (3-4), 678-681, 2008 | 13 | 2008 |
| Theoretical modeling and experimental investigation of MIS radiation sensor with giant internal signal amplification A Malik, V Grimalsky, AT Jacome, D Durini Sensors and Actuators A: Physical 114 (2-3), 319-326, 2004 | 12 | 2004 |
| Interdigitated microelectrode arrays based on non-cytotoxic a-sixc1-x: H for E. coli detection J Herrera-Celis, C Reyes-Betanzo, A Torres-Jacome, A Hernández-Flores, ... Journal of The Electrochemical Society 164 (13), B641, 2017 | 11 | 2017 |
| Influence of the a-SiGe: H thickness on the conduction mechanisms of n-amorphous-SiGe: H∕ p-crystalline-Si heterojunction diodes P Rosales-Quintero, A Torres-Jacome, R Murphy-Arteaga, ... Journal of applied physics 97 (8), 2005 | 11 | 2005 |
| a-Si: H crystallization from isothermal annealing and its dependence on the substrate used M Rojas-Lopez, A Orduña-Diaz, R Delgado-Macuil, VL Gayou, ... Materials Science and Engineering: B 174 (1-3), 137-140, 2010 | 10 | 2010 |
| Latchup prevention by using guard ring structures in a 0.8 µm bulk CMOS process F Coyotl, A Torres Superficies y vacío 17 (4), 17-22, 2004 | 10 | 2004 |
| Analysis, Synthesis and Characterization of Thin Films of a-Si: H (n-type and p-type) Deposited by PECVD for Solar Cell Applications A Garcia-Barrientos, JL Bernal-Ponce, J Plaza-Castillo, ... Materials 14 (21), 6349, 2021 | 9 | 2021 |
| Germanium metal-semiconductor-metal photodetectors evanescently coupled with upper-level silicon oxynitride dielectric waveguides JC Cervantes-González, D Ahn, X Zheng, SK Banerjee, AT Jacome, ... Applied Physics Letters 101 (26), 2012 | 9 | 2012 |
| Fabrication of polysilicon microstructures using the PolyMEMS INAOE technology D Diaz, F Quiñones, C Zuñiga, J Molina, J Hidalga, M Linares, P Rosales, ... The 13th World Congress in Mechanism and Machine Science, 1-5, 2011 | 8 | 2011 |
| Raman studies of aluminum induced microcrystallization of n+ Si: H films produced by PECVD M Rojas-Lopez, VL Gayou, RE Pérez-Blanco, A Torres-Jácome, ... Thin Solid Films 445 (1), 32-37, 2003 | 8 | 2003 |
| Current conduction mechanisms in n-type α-SiGe: H/p-type c-Si heterojunctions P Rosales-Quintero, A Torres-Jacome, D la Hidalga-Wade, ... Superficies y vacío 21 (2), 1-8, 2008 | 7 | 2008 |
| Morphological transformation and kinetic analysis in the aluminum-mediated a-Si: H crystallization M Rojas-Lopez, A Orduña-Diaz, R Delgado-Macuil, VL Gayou, ... Journal of non-crystalline solids 352 (3), 281-284, 2006 | 6 | 2006 |
| An improved substrate‐loss model to determine MOSFET drain, source and substrate elements R Torres‐Torres, R Murphy‐Arteaga, A Torres‐Jacome Microwave and Optical Technology Letters 43 (2), 126-130, 2004 | 6 | 2004 |
