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John Dallesasse
John Dallesasse
Professor of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign
Dirección de correo verificada de illinois.edu
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Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
JM Dallesasse, N Holonyak Jr, AR Sugg, TA Richard, N El‐Zein
Applied Physics Letters 57 (26), 2844-2846, 1990
7871990
Method and system for heterogeneous substrate bonding of waveguide receivers
SB Krasulick, J Dallesasse
US Patent 8,611,388, 2013
1882013
Method and system of heterogeneous substrate bonding for photonic integration
SB Krasulick, J Dallesasse
US Patent 8,630,326, 2014
1792014
Native‐oxide stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers
JM Dallesasse, N Holonyak Jr
Applied Physics Letters 58 (4), 394-396, 1991
1511991
Method and system for hybrid integration of an opto-electronic integrated circuit
J Dallesasse, SB Krasulick, W Kozlovsky
US Patent 8,368,995, 2013
1392013
Optical transceiver for 40 gigabit/second transmission
J Dallesasse
US Patent 7,941,053, 2011
1362011
Native oxide stabilization of AlAs‐GaAs heterostructures
AR Sugg, N Holonyak, JE Baker, FA Kish, JM Dallesasse
Applied physics letters 58 (11), 1199-1201, 1991
1231991
AlGaAs native oxide
N Holonyak Jr, JM Dallesasse
US Patent 5,262,360, 1993
1121993
Planar native‐oxide index‐guided AlxGa1− xAs‐GaAs quantum well heterostructure lasers
FA Kish, SJ Caracci, N Holonyak, JM Dallesasse, KC Hsieh, MJ Ries
Applied physics letters 59 (14), 1755-1757, 1991
1101991
Integrated tunable CMOS laser
T Creazzo, E Marchena, SB Krasulick, PKL Yu, D Van Orden, JY Spann, ...
Optics express 21 (23), 28048-28053, 2013
942013
Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures
JM Dallesasse, N El‐Zein, N Holonyak Jr, KC Hsieh, RD Burnham, ...
Journal of applied physics 68 (5), 2235-2238, 1990
931990
Method and system for template assisted wafer bonding
J Dallesasse, SB Krasulick
US Patent 8,222,084, 2012
842012
Properties and use of ln0.5(AlxGa1-x)0.5P and AlxGa1-x as native oxides in heterostructure lasers
FA Kish, J Caracci, N Holonyak, KC Hsieh, JE Baker, SA Maranowski, ...
Journal of electronic materials 21, 1133-1139, 1992
781992
Stability of AlAs in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures
JM Dallesasse, P Gavrilovic, N Holonyak Jr, RW Kaliski, DW Nam, ...
Applied physics letters 56 (24), 2436-2438, 1990
761990
Method and system for hybrid integration of a tunable laser
J Dallesasse, SB Krasulick, W Kozlovsky
US Patent 8,615,025, 2013
742013
Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures
DG Deppe, N Holonyak Jr, WE Plano, VM Robbins, JM Dallesasse, ...
Journal of applied physics 64 (4), 1838-1844, 1988
691988
Semiconductor devices with native aluminum oxide regions
N Holonyak Jr, JM Dallesasse
US Patent 5,373,522, 1994
651994
Optical transceiver for 100 gigabit/second transmission
J Dallesasse
US Patent 7,380,993, 2008
602008
Method for making aluminum gallium arsenide semiconductor device with native oxide layer
N Holonyak Jr, JM Dallesasse
US Patent 5,696,023, 1997
591997
Method and system for hybrid integration of a tunable laser and a phase modulator
J Dallesasse, SB Krasulick, W Kozlovsky
US Patent 8,559,470, 2013
572013
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
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