Yordan M. Georgiev, PhD

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Justin D. HolmesProfessor of NanochemistryDirección de correo verificada de ucc.ie
Anushka GangnaikUniversity of SouthamptonDirección de correo verificada de soton.ac.uk
Prof.Dr. Heinrich KurzWissenschaftlicher Direktor AMO GmbH, 1993-2016 (verstorben)Dirección de correo verificada de amo.de
Artur ErbeNanoelectronics Department, Institute of Ion Beam Physics and Materials Research, Helmholtz-ZentrumDirección de correo verificada de hzdr.de
Manfred HelmInstitute Director at Helmholtz-Zentrum Dresden-Rossendorf, and Professor of Physics, TU DresdenDirección de correo verificada de hzdr.de
Samaresh Das, Prof.Indian institute of technology, Tyndall National Institute, Hitachi Cambridge LabDirección de correo verificada de care.iitd.ac.in
Adrian NightingaleLecturer in Microfluidics & Sensor Design, Engineering, University of SouthamptonDirección de correo verificada de southampton.ac.uk
Max C. LemmeProfessor, RWTH Aachen University, Germany, Director, AMO GmbHDirección de correo verificada de eld.rwth-aachen.de
John O'ConnellR&D Process Engineer at AlconDirección de correo verificada de alcon.com
Elizabeth BuitragoHitachi EnergyDirección de correo verificada de hitachienergy.com
A.M. IonescuProfessor of NanoelectronicsDirección de correo verificada de epfl.ch
Roisin KellySenior Project Engineer, StrykerDirección de correo verificada de stryker.com
Maryam shayestehUniversity of SouthamptonDirección de correo verificada de soton.ac.uk
Dr. Vladimir DjaraAlbis OptoelectronicsDirección de correo verificada de albisopto.com
Cian CumminsimecDirección de correo verificada de imec.be
Dipu BorahTrinity College Dublin, IrelandDirección de correo verificada de tcd.ie
Giorgos FagasTyndall National InstituteDirección de correo verificada de tyndall.ie
Richard HobbsAssistant Professor & Royal Society-Science Foundation Ireland University Research Fellow, TrinityDirección de correo verificada de tcd.ie
Rossen YankovSenior Research Scientist, Helmholtz-Zentrum Dresden-Rossendorf, FWIZ-I, Dresden, GermanyDirección de correo verificada de hzdr.de
Giuseppe Alessio VerniASM Microchemistry, Principal TechnologistDirección de correo verificada de umail.ucc.ie

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Yordan M. Georgiev, PhD

Head of Nanofabrication, I-te of Ion Beam Phys. & Mat. Res., Helmholtz-Centrum Dresden-Rossendorf

Dirección de correo verificada de hzdr.de

Nanotechnology Nanofabrication Nanoelectronics Biosensors Semiconductor nanowires


Título Ordenar por citas Ordenar por año Ordenar por título	Citado por Citado por	Año
Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist W Henschel, YM Georgiev, H Kurz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003	209	2003
New generation electron beam resists: a review AS Gangnaik, YM Georgiev, JD Holmes Chemistry of Materials 29 (5), 1898-1917, 2017	176	2017
Aligned silicon nanofins via the directed self-assembly of PS-b-P4VP block copolymer and metal oxide enhanced pattern transfer C Cummins, A Gangnaik, RA Kelly, D Borah, J O'Connell, N Petkov, ... Nanoscale 7 (15), 6712-6721, 2015	67	2015
Observation of ultrafast solid-density plasma dynamics using femtosecond X-ray pulses from a free-electron laser T Kluge, M Rödel, J Metzkes-Ng, A Pelka, AL Garcia, I Prencipe, ... Physical Review X 8 (3), 031068, 2018	54	2018
Organo-arsenic molecular layers on silicon for high-density doping J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ... ACS applied materials & interfaces 7 (28), 15514-15521, 2015	50	2015
Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor E Buitrago, G Fagas, MFB Badia, YM Georgiev, M Berthomé, AM Ionescu Sensors and Actuators B: Chemical 183, 1-10, 2013	47	2013
Surface roughness of hydrogen silsesquioxane as a negative tone electron beam resist YM Georgiev, W Henschel, A Fuchs, H Kurz Vacuum 77 (2), 117-123, 2005	43	2005
Highly selective etch process for silicon-on-insulator nano-devices T Wahlbrink, T Mollenhauer, YM Georgiev, W Henschel, JK Efavi, ... Microelectronic Engineering 78, 212-217, 2005	42	2005
Characterisation of a novel electron beam lithography resist, SML and its comparison to PMMA and ZEP resists A Gangnaik, YM Georgiev, B McCarthy, N Petkov, V Djara, JD Holmes Microelectronic engineering 123, 126-130, 2014	36	2014
A wired-AND transistor: Polarity controllable FET with multiple inputs M Simon, J Trommer, B Liang, D Fischer, T Baldauf, MB Khan, A Heinzig, ... 2018 76th Device Research Conference (DRC), 1-2, 2018	35	2018
Interferometric in situ alignment for UV-based nanoimprint A Fuchs, B Vratzov, T Wahlbrink, Y Georgiev, H Kurz Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004	35	2004
Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors E Buitrago, MFB Badia, YM Georgiev, R Yu, O Lotty, JD Holmes, ... Sensors and Actuators B: Chemical 199, 291-300, 2014	31	2014
Parallel arrays of sub-10 nm aligned germanium nanofins from an in situ metal oxide hardmask using directed self-assembly of block copolymers C Cummins, A Gangnaik, RA Kelly, AJ Hydes, J O’Connell, N Petkov, ... Chemistry of Materials 27 (17), 6091-6096, 2015	28	2015
Supercritical drying process for high aspect-ratio HSQ nano-structures T Wahlbrink, D Küpper, YM Georgiev, J Bolten, M Möller, D Küpper, ... Microelectronic engineering 83 (4-9), 1124-1127, 2006	27	2006
Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion R Duffy, M Shayesteh, K Thomas, E Pelucchi, R Yu, A Gangnaik, ... Journal of Materials Chemistry C 2 (43), 9248-9257, 2014	26	2014
Junctionless nanowire transistor fabricated with high mobility Ge channel R Yu, YM Georgiev, S Das, RG Hobbs, IM Povey, N Petkov, M Shayesteh, ... physica status solidi (RRL)–Rapid Research Letters 8 (1), 65-68, 2014	25	2014
Novel germanium surface modification for sub-10 nm patterning with electron beam lithography and hydrogen silsesquioxane resist AS Gangnaik, YM Georgiev, G Collins, JD Holmes Journal of Vacuum Science & Technology B 34 (4), 2016	22	2016
Fully CMOS-compatible top-down fabrication of sub-50 nm silicon nanowire sensing devices YM Georgiev, N Petkov, B McCarthy, R Yu, V Djara, D O’Connell, O Lotty, ... Microelectronic engineering 118, 47-53, 2014	22	2014
Resist–substrate interface tailoring for generating high-density arrays of Ge and Bi2Se3 nanowires by electron beam lithography RG Hobbs, M Schmidt, CT Bolger, YM Georgiev, P Fleming, MA Morris, ... Journal of Vacuum Science & Technology B 30 (4), 2012	22	2012
Solvent vapor annealing of block copolymers in confined topographies: Commensurability considerations for nanolithography C Cummins, RA Kelly, A Gangnaik, YM Georgiev, N Petkov, JD Holmes, ... Macromolecular Rapid Communications 36 (8), 762-767, 2015	21	2015

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