Simon Watkins
Simon Watkins
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Valence-band anticrossing in mismatched III-V semiconductor alloys
K Alberi, J Wu, W Walukiewicz, KM Yu, OD Dubon, SP Watkins, CX Wang, ...
Physical Review B—Condensed Matter and Materials Physics 75 (4), 045203, 2007
300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/> 6 V
MW Dvorak, CR Bolognesi, OJ Pitts, SP Watkins
IEEE Electron Device Letters 22 (8), 361-363, 2001
Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy
J Hu, XG Xu, JAH Stotz, SP Watkins, AE Curzon, MLW Thewalt, N Matine, ...
Applied Physics Letters 73 (19), 2799-2801, 1998
InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs
CR Bolognesi, MMW Dvorak, P Yeo, XG Xu, SP Watkins
IEEE Transactions on Electron Devices 48 (11), 2631-2639, 2001
Heavily carbon-doped GaAsSb grown on InP for HBT applications
SP Watkins, OJ Pitts, C Dale, XG Xu, MW Dvorak, N Matine, CR Bolognesi
Journal of Crystal growth 221 (1-4), 59-65, 2000
Low‐temperature photoluminescence of epitaxial InAs
Y Lacroix, CA Tran, SP Watkins, MLW Thewalt
Journal of applied physics 80 (11), 6416-6424, 1996
Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction
CR Bolognesi, N Matine, RW Dvorak, XG Xu, J Hu, SP Watkins
IEEE Electron Device Letters 20 (4), 155-157, 1999
Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm
D Lackner, OJ Pitts, M Steger, A Yang, MLW Thewalt, SP Watkins
Applied Physics Letters 95 (8), 2009
InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations
D Lackner, M Steger, MLW Thewalt, OJ Pitts, YT Cherng, SP Watkins, ...
Journal of Applied Physics 111 (3), 2012
Metalorganic chemical vapor deposition of high‐purity GaAs using tertiarybutylarsine
G Haacke, SP Watkins, H Burkhard
Applied physics letters 54 (20), 2029-2031, 1989
Lithium and lithium-carbon isoelectronic complexes in silicon: Luminescence-decay-time, absorption, isotope-splitting, and Zeeman measurements
EC Lightowlers, LT Canham, G Davies, MLW Thewalt, SP Watkins
Physical Review B 29 (8), 4517, 1984
Geometric limits of coherent III-V core/shell nanowires
O Salehzadeh, KL Kavanagh, SP Watkins
Journal of Applied Physics 114 (5), 2013
Epitaxial growth of high‐mobility GaAs using tertiarybutylarsine and triethylgallium
G Haacke, SP Watkins, H Burkhard
Applied physics letters 56 (5), 478-480, 1990
Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine
SP Watkins, G Haacke
Applied physics letters 59 (18), 2263-2265, 1991
Isoelectronic bound excitons in In-and T1-doped Si: A novel semiconductor defect
SP Watkins, MLW Thewalt, T Steiner
Physical Review B 29 (10), 5727, 1984
Metalorganic vapor phase epitaxy of high-quality and its application to heterostructure bipolar transistors
XG Xu, J Hu, SP Watkins, N Matine, MW Dvorak, CR Bolognesi
Applied physics letters 74 (7), 976-978, 1999
Rectifying characteristics of Te-doped GaAs nanowires
O Salehzadeh, MX Chen, KL Kavanagh, SP Watkins
Applied Physics Letters 99 (18), 2011
Photoluminescence lifetime, absorption and excitation spectroscopy measurements on isoelectronic bound excitons in beryllium-doped silicon
MLW Thewalt, SP Watkins, UO Ziemelis, EC Lightowlers, MO Henry
Solid State Communications 44 (5), 573-577, 1982
Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications
D Lackner, OJ Pitts, S Najmi, P Sandhu, KL Kavanagh, A Yang, M Steger, ...
Journal of crystal growth 311 (14), 3563-3567, 2009
Ultrahigh performance staggered lineup (“Type-II”) InP/GaAsSb/InP NpN double heterojunction bipolar transistors
CR Bolognesi, MW Dvorak, N Matine, OJ Pitts, SP Watkins
Japanese journal of applied physics 41 (2S), 1131, 2002
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