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Jian Fu Zhang
Jian Fu Zhang
Professor of Microelectronics, Liverpool John Moores University
Verified email at ljmu.ac.uk
Title
Cited by
Cited by
Year
Electron trap generation in thermally grown SiO2 under Fowler–Nordheim stress
JF Zhang, S Taylor, W Eccleston
Journal of applied physics 71 (2), 725-734, 1992
1511992
THEORETICAL INVESTIGATION OF A 2 KA DC NITROGEN ARC IN A SUPERSONIC NOZZLE
JF ZHANG, MTC FANG, DB NEWLAND
Journal of Physics D-Applied Physics, 0
147*
Positive bias temperature instability in MOSFETs
JF Zhang, W Eccleston
IEEE Transactions on Electron Devices 45 (1), 116-124, 1998
1021998
Hole traps in silicon dioxides. Part I. Properties
JF Zhang, CZ Zhao, AH Chen, G Groeseneken, R Degraeve
IEEE Transactions on Electron Devices 51 (8), 1267-1273, 2004
972004
A review of the plasma oxidation of silicon and its applications
S Taylor, JF Zhang, W Eccleston
Semiconductor science and technology 8 (7), 1426, 1993
911993
A comparative study of the electron trapping and thermal detrapping in SiO2 prepared by plasma and thermal oxidation
JF Zhang, S Taylor, W Eccleston
Journal of applied physics 72 (4), 1429-1435, 1992
811992
Hole trapping and trap generation in the gate silicon dioxide
JF Zhang, HK Sii, G Groeseneken, R Degraeve
IEEE Transactions on Electron Devices 48 (6), 1127-1135, 2001
762001
A quantitative investigation of electron detrapping in SiO2 under Fowler–Nordheim stress
JF Zhang, S Taylor, W Eccleston
Journal of applied physics 71 (12), 5989-5996, 1992
731992
The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM
N Sedghi, H Li, IF Brunell, K Dawson, RJ Potter, Y Guo, JT Gibbon, ...
Applied Physics Letters 110 (10), 2017
692017
NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement
Z Ji, L Lin, JF Zhang, B Kaczer, G Groeseneken
IEEE Transactions on Electron Devices 57 (1), 228-237, 2009
682009
Stress-induced positive charge in Hf-based gate dielectrics: Impact on device performance and a framework for the defect
CZ Zhao, JF Zhang, MH Chang, AR Peaker, S Hall, G Groeseneken, ...
IEEE Transactions on Electron Devices 55 (7), 1647-1656, 2008
682008
Two-Pulse : A New Method for Characterizing Electron Traps in the Bulk of Dielectric Stacks
WD Zhang, B Govoreanu, XF Zheng, DR Aguado, M Rosmeulen, ...
IEEE Electron Device Letters 29 (9), 1043-1046, 2008
642008
Real Vth instability of pMOSFETs under practical operation conditions
JF Zhang, Z Ji, MH Chang, B Kaczer, G Groeseneken
2007 IEEE International Electron Devices Meeting, 817-820, 2007
612007
Hole-traps in silicon dioxides. Part II. Generation mechanism
CZ Zhao, JF Zhang, G Groeseneken, R Degraeve
IEEE Transactions on Electron Devices 51 (8), 1274-1280, 2004
582004
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ...
IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013
562013
An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques
Z Ji, JF Zhang, MH Chang, B Kaczer, G Groeseneken
IEEE Transactions on Electron Devices 56 (5), 1086-1093, 2009
562009
Defects and instabilities in Hf-dielectric/SiON stacks
JF Zhang
Microelectronic engineering 86 (7-9), 1883-1887, 2009
552009
A single pulse charge pumping technique for fast measurements of interface states
L Lin, Z Ji, JF Zhang, WD Zhang, B Kaczer, S De Gendt, G Groeseneken
IEEE Transactions on Electron Devices 58 (5), 1490-1498, 2011
522011
Determination of capture cross sections for as-grown electron traps in HfO2∕ HfSiO stacks
CZ Zhao, JF Zhang, MB Zahid, B Govoreanu, G Groeseneken, ...
Journal of applied physics 100 (9), 2006
522006
Traps
JF Zhang
Wiley Encyclopedia of Electrical and Electronics Engineering, 1-10, 1999
521999
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