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Ray Duffy
Ray Duffy
Tyndall National Institute, University College Cork
Dirección de correo verificada de tyndall.ie
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Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ...
Journal of Applied Physics 120 (12), 2016
1702016
Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors
R Duffy, MJH Van Dal, BJ Pawlak, M Kaiser, RGR Weemaes, B Degroote, ...
Applied Physics Letters 90 (24), 2007
1202007
Diffusion, activation, and regrowth behavior of high dose P implants in Ge
A Satta, E Simoen, R Duffy, T Janssens, T Clarysse, A Benedetti, ...
Applied Physics Letters 88 (16), 2006
1202006
Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography
MJH Van Dal, N Collaert, G Doornbos, G Vellianitis, G Curatola, ...
2007 IEEE symposium on VLSI technology, 110-111, 2007
1112007
Semiconductor substrate with solid phase epitaxial regrowth with reduced junction leakage and method of producing same
BJ Pawlak, RJ Duffy, R Lindsay
US Patent 8,187,959, 2012
952012
Boron uphill diffusion during ultrashallow junction formation
R Duffy, VC Venezia, A Heringa, TWT Hüsken, MJP Hopstaken, ...
Applied Physics Letters 82 (21), 3647-3649, 2003
872003
Suppression of phosphorus diffusion by carbon co-implantation
BJ Pawlak, R Duffy, T Janssens, W Vandervorst, SB Felch, EJH Collart, ...
Applied Physics Letters 89 (6), 2006
812006
Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C
L Ansari, S Monaghan, N McEvoy, CÓ Coileáin, CP Cullen, J Lin, R Siris, ...
npj 2D Materials and Applications 3 (1), 33, 2019
792019
CMOS device optimization for mixed-signal technologies
PA Stolk, HP Tuinhout, R Duffy, E Augendre, LP Bellefroid, MJB Bolt, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
752001
Gate current: Modeling,/spl Delta/L extraction and impact on RF performance
R Van Langevelde, AJ Scholten, R Duffy, FN Cubaynes, MJ Knitel, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
672001
Boron diffusion in amorphous silicon and the role of fluorine
R Duffy, VC Venezia, A Heringa, BJ Pawlak, MJP Hopstaken, GCJ Maas, ...
Applied physics letters 84 (21), 4283-4285, 2004
622004
Groups III and V impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals
R Duffy, T Dao, Y Tamminga, K Van Der Tak, F Roozeboom, E Augendre
Applied Physics Letters 89 (7), 2006
592006
Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
J Mody, R Duffy, P Eyben, J Goossens, A Moussa, W Polspoel, ...
Journal of Vacuum Science & Technology B 28 (1), C1H5-C1H13, 2010
572010
Optimized laser thermal annealing on germanium for high dopant activation and low leakage current
M Shayesteh, D O’Connell, F Gity, P Murphy-Armando, R Yu, K Huet, ...
IEEE Transactions on Electron Devices 61 (12), 4047-4055, 2014
532014
Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance
R Duffy, G Curatola, BJ Pawlak, G Doornbos, K Van Der Tak, P Breimer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
532008
Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface
R Duffy, VC Venezia, J Loo, MJP Hopstaken, MA Verheijen, ...
Applied Physics Letters 86 (8), 2005
512005
Organo-arsenic molecular layers on silicon for high-density doping
J O’Connell, GA Verni, A Gangnaik, M Shayesteh, B Long, YM Georgiev, ...
ACS applied materials & interfaces 7 (28), 15514-15521, 2015
492015
Defect evolution and dopant activation in laser annealed Si and Ge
F Cristiano, M Shayesteh, R Duffy, K Huet, F Mazzamuto, Y Qiu, M Quillec, ...
Materials Science in Semiconductor Processing 42, 188-195, 2016
482016
Progress on germanium–tin nanoscale alloys
J Doherty, S Biswas, E Galluccio, CA Broderick, A Garcia-Gil, R Duffy, ...
Chemistry of Materials 32 (11), 4383-4408, 2020
472020
Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
M Aboy, L Pelaz, LA Marqués, P López, J Barbolla, R Duffy
Journal of applied physics 97 (10), 2005
432005
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Artículos 1–20