| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 666 | 2019 |
| Giant ferroelectric resistance switching controlled by a modulatory terminal for low‐power neuromorphic in‐memory computing F Xue, X He, Z Wang, JRD Retamal, Z Chai, L Jing, C Zhang, H Fang, ... Advanced Materials 33 (21), 2008709, 2021 | 106 | 2021 |
| Committee machines—a universal method to deal with non-idealities in memristor-based neural networks D Joksas, P Freitas, Z Chai, WH Ng, M Buckwell, C Li, WD Zhang, Q Xia, ... Nature communications 11 (1), 4273, 2020 | 88 | 2020 |
| The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM N Sedghi, H Li, IF Brunell, K Dawson, RJ Potter, Y Guo, JT Gibbon, ... Applied Physics Letters 110 (10), 2017 | 84 | 2017 |
| Two-Pulse – : A New Method for Characterizing Electron Traps in the Bulk of Dielectric Stacks WD Zhang, B Govoreanu, XF Zheng, DR Aguado, M Rosmeulen, ... IEEE Electron Device Letters 29 (9), 1043-1046, 2008 | 63 | 2008 |
| Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects SWM Hatta, Z Ji, JF Zhang, M Duan, WD Zhang, N Soin, B Kaczer, ... IEEE Transactions on Electron Devices 60 (5), 1745-1753, 2013 | 58 | 2013 |
| Impact of RTN on pattern recognition accuracy of RRAM-based synaptic neural network Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters 39 (11), 1652-1655, 2018 | 56 | 2018 |
| A single pulse charge pumping technique for fast measurements of interface states L Lin, Z Ji, JF Zhang, WD Zhang, B Kaczer, S De Gendt, G Groeseneken IEEE Transactions on Electron Devices 58 (5), 1490-1498, 2011 | 54 | 2011 |
| A low-power and high-speed True Random Number Generator using generated RTN J Brown, R Gao, Z Ji, J Chen, J Wu, J Zhang, B Zhou, Q Shi, J Crowford, ... 2018 IEEE symposium on VLSI technology, 95-96, 2018 | 49 | 2018 |
| Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation R Gao, AB Manut, Z Ji, J Ma, M Duan, JF Zhang, J Franco, SWM Hatta, ... IEEE Transactions on Electron Devices 64 (4), 1467-1473, 2017 | 48 | 2017 |
| Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides MH Chang, JF Zhang, WD Zhang IEEE transactions on electron devices 53 (6), 1347-1354, 2006 | 45 | 2006 |
| Two types of neutral electron traps generated in the gate silicon dioxide WD Zhang, JF Zhang, A Lalor, D Burton, GV Groeseneken, R Degraeve IEEE Transactions on Electron Devices 49 (11), 1868-1875, 2002 | 45 | 2002 |
| Tailoring the synaptic properties of a-IGZO memristors for artificial deep neural networks ME Pereira, J Deuermeier, P Freitas, P Barquinha, W Zhang, R Martins, ... APL Materials 10 (1), 2022 | 41 | 2022 |
| New analysis method for time-dependent device-to-device variation accounting for within-device fluctuation M Duan, JF Zhang, Z Ji, WD Zhang, B Kaczer, T Schram, R Ritzenthaler, ... IEEE transactions on electron devices 60 (8), 2505-2511, 2013 | 40 | 2013 |
| Energy and Spatial Distributions of Electron Traps Throughout Stacks as the IPD in Flash Memory Application XF Zheng, WD Zhang, B Govoreanu, DR Aguado, JF Zhang, J Van Houdt IEEE Transactions on Electron Devices 57 (1), 288-296, 2009 | 39 | 2009 |
| Negative bias temperature instability lifetime prediction: Problems and solutions Z Ji, S Hatta, JF Zhang, JG Ma, W Zhang, N Soin, B Kaczer, S De Gendt, ... 2013 IEEE International Electron Devices Meeting, 15.6. 1-15.6. 4, 2013 | 38 | 2013 |
| Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... IEEE Electron Device Letters 40 (8), 1269-1272, 2019 | 36 | 2019 |
| Insight into electron traps and their energy distribution under positive bias temperature stress and hot carrier aging M Duan, JF Zhang, Z Ji, WD Zhang, D Vigar, A Asenov, L Gerrer, ... IEEE Transactions on Electron Devices 63 (9), 3642-3648, 2016 | 36 | 2016 |
| Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ... 2019 IEEE International Electron Devices Meeting (IEDM), 35.2. 1-35.2. 4, 2019 | 35 | 2019 |
| Defect loss: A new concept for reliability of MOSFETs M Duan, JF Zhang, Z Ji, W Zhang, B Kaczer, S De Gendt, G Groeseneken IEEE electron device letters 33 (4), 480-482, 2012 | 35 | 2012 |
Jian Fu ZhangProfessor of Microelectronics, Liverpool John Moores UniversityVerified email at ljmu.ac.uk
