John McCaffrey
John McCaffrey
Dirección de correo verificada de
Citado por
Citado por
Size and shape engineering of vertically stacked self-assembled quantum dots
ZR Wasilewski, S Fafard, JP McCaffrey
Journal of crystal growth 201, 1131-1135, 1999
Quantum dot infrared photodetectors
HC Liu, M Gao, J McCaffrey, ZR Wasilewski, S Fafard
Applied Physics Letters 78 (1), 79-81, 2001
Red-emitting semiconductor quantum dot lasers
S Fafard, K Hinzer, S Raymond, M Dion, J McCaffrey, Y Feng, ...
Science 274 (5291), 1350-1353, 1996
Radiation attenuation by lead and nonlead materials used in radiation shielding garments
JP McCaffrey, H Shen, B Downton, E Mainegra‐Hing
Medical physics 34 (2), 530-537, 2007
Nanocrystalline-silicon superlattice produced by controlled recrystallization
L Tsybeskov, KD Hirschman, SP Duttagupta, M Zacharias, PM Fauchet, ...
Applied Physics Letters 72 (1), 43-45, 1998
Ordering and self-organization in nanocrystalline silicon
GF Grom, DJ Lockwood, JP McCaffrey, HJ Labbe, PM Fauchet, B White Jr, ...
Nature 407 (6802), 358-361, 2000
SiO2 film thickness metrology by x-ray photoelectron spectroscopy
ZH Lu, JP McCaffrey, B Brar, GD Wilk, RM Wallace, LC Feldman, SP Tay
Applied Physics Letters 71 (19), 2764-2766, 1997
Surface damage formation during ion-beam thinning of samples for transmission electron microscopy
JP McCaffrey, MW Phaneuf, LD Madsen
Ultramicroscopy 87 (3), 97-104, 2001
Manipulating the energy levels of semiconductor quantum dots
S Fafard, ZR Wasilewski, CN Allen, D Picard, M Spanner, JP McCaffrey, ...
Physical Review B 59 (23), 15368, 1999
InAs self‐assembled quantum dots on InP by molecular beam epitaxy
S Fafard, Z Wasilewski, J McCaffrey, S Raymond, S Charbonneau
Applied Physics Letters 68 (7), 991-993, 1996
Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness
JA Gupta, D Landheer, JP McCaffrey, GI Sproule
Applied Physics Letters 78 (12), 1718-1720, 2001
Radiation shielding materials and radiation scatter effects for interventional radiology (IR) physicians
JP McCaffrey, F Tessier, H Shen
Medical physics 39 (7Part1), 4537-4546, 2012
Optimizing non‐Pb radiation shielding materials using bilayers
JP McCaffrey, E Mainegra‐Hing, H Shen
Medical physics 36 (12), 5586-5594, 2009
Coupled InAs/GaAs quantum dots with well-defined electronic shells
S Fafard, M Spanner, JP McCaffrey, ZR Wasilewski
Applied Physics Letters 76 (16), 2268-2270, 2000
Quantum‐well intermixing for optoelectronic integration using high energy ion implantation
S Charbonneau, PJ Poole, PG Piva, GC Aers, ES Koteles, M Fallahi, ...
Journal of applied physics 78 (6), 3697-3705, 1995
Characterization of Gd2 O 3 Films Deposited on Si (100) by Electron-Beam Evaporation
D Landheer, JA Gupta, GI Sproule, JP McCaffrey, MJ Graham, KC Yang, ...
Journal of the Electrochemical Society 148 (2), G29, 2001
Improved TEM samples of semiconductors prepared by a small‐angle cleavage technique
JP McCaffrey
Microscopy Research and Technique 24 (2), 180-184, 1993
Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots
PJ Poole, J McCaffrey, RL Williams, J Lefebvre, D Chithrani
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substrates
MW Denhoff, JP McCaffrey
Journal of applied physics 70 (7), 3986-3988, 1991
Lasing in quantum-dot ensembles with sharp adjustable electronic shells
S Fafard, ZR Wasilewski, CN Allen, K Hinzer, JP McCaffrey, Y Feng
Applied physics letters 75 (7), 986-988, 1999
El sistema no puede realizar la operación en estos momentos. Inténtalo de nuevo más tarde.
Artículos 1–20